data sheet the information in this document is subject to change without notice. document no. p11287ej4v0ds00 (4th edition) date published april 1998 ns cp(k) printed in japan photocoupler ps2607,ps2608,ps2607l,ps2608l high isolation voltage ac input, high ctr 6-pin photocoupler ? 1988 the mark ? ? ? ? shows major revised points. - nepoc tm series - description the ps2607, ps2608, ps2607l, ps2608l are optically coupled isolators containing gaas light emitting diodes and an npn silicon darlington-connected phototransistor in a plastic dip (dual in-line package). the ps2607l, ps2608l are lead bending type (gull-wing) for surface mount. features ? high isolation voltage (bv = 5 000 vr.m.s.) ? ac input response ? high-speed switching (t r , t f = 100 m s typ.) ? high current transfer ratio (ctr = 2 000 % typ.) ? ul approved: file no. e72422 (s) ? ordering number of taping product: ps2607l-e3, e4, PS2608L-E3, e4 applications ? telephone ? fax/oa equipment ? ac/dc line interface ? measurement equipment
2 ps2607,ps2608,ps2607l,ps2608l package dimensions (in millimeters) ps2607, ps2608 dip type ps2607l, ps2608l lead bending type 2.54 3.8 max. 0.65 4.55 max. 2.54 max. 2.8 min. 0.500.10 0.25 m 1.34 3.8 max. 2.54 max. 2.54 1.340.10 0.25 m 10.16 max. 10.16 max. 6.5 0 to 15? 7.62 6.5 0.90.25 9.600.4 0.05 to 0.2 7.62 pin connections (top view) ps2608, ps2608l 1. anode, cathode 2. cathode, anode 3. nc 4. emitter 5. collector 6. nc 13 2 654 ps2607, ps2607l 13 2 654 1. anode, cathode 2. cathode, anode 3. nc 4. emitter 5. collector 6. base
3 ps2607,ps2608,ps2607l,ps2608l absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current (dc) i f 80 ma power dissipation derating d p d / c1.5mw/ c power dissipation p d 150 mw peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 40 v emitter to collector voltage v eco 6v collector current i c 200 ma power dissipation derating d p c / c2.0mw/ c power dissipation p c 200 mw isolation voltage *2 bv 5 000 vr.m.s. operating ambient temperature t a - 55 to +100 c storage temperature t stg - 55 to +150 c *1 pw = 100 m s, duty cycle = 1 % *2 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
4 ps2607,ps2608,ps2607l,ps2608l electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.1 1.4 v terminal capacitance c t v = 0 v, f = 1.0 mhz 60 pf transistor collector to emitter dark current i ceo v ce = 40 v, i f = 0 ma 400 na dc current gain *1 h fe i c = 2 ma, v ce = 5 v 180 coupled current transfer ratio (i c /i f ) ctr i f = 1 ma, v ce = 2 v 200 2 000 % ctr ratio *2 ctr1/ ctr2 i f = 1 ma, i c = 2 ma 0.3 1.0 3.0 collector saturation voltage v ce (sat) i f = 1 ma, i c = 2 ma 1.0 v isolation resistance r i-o v i-o = 1.0 kv dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1.0 mhz 0.6 pf rise time *3 t r v cc = 5 v, i c = 10 ma, r l = 100 w 100 m s fall time *3 t f 100 *1 second stage transistor (ps2607, ps2607l only) *2 ctr1 = i c1 /i f1 , ctr2 = i c2 /i f2 i f1 i f2 i c1 i c2 v ce *3 test circuit for switching time pulse input v cc v out r l = 100 w 50 w i f (pw = 1 ms, duty cycle = 1/10)
5 ps2607,ps2608,ps2607l,ps2608l typical characteristics (t a = 25 c, unless otherwise specified) diode power dissipation vs. ambient temperature ambient temperature t a (?c) diode power dissipation p d (mw) 200 100 50 0 150 25 50 75 100 transistor power dissipation vs. ambient temperature ambient temperature t a (?c) transistor power dissipation p c (mw) 200 100 50 0 150 25 50 75 100 collector to emitter dark current vs. ambient temperature ambient temperature t a (?c) collector to emitter dark current i ceo (na) C60 C40 0 20 40 60 100 C20 80 500 50 1 50 000 5 000 10 000 1 000 100 10 5 v ce = 40 v 24 v 10 v 5 v 2 v collector current vs. collector saturation voltage collector saturation voltage v ce(sat) (v) collector current i c (ma) 1 000 100 0.1 10 1 0.4 0.6 0.8 1.0 1.2 1.6 1.4 i f = 10 ma 5 ma 1 ma 0.5 ma 0.2 ma 0.1 ma forward current vs. forward voltage forward voltage v f (v) forward current i f (ma) 80 60 40 20 0 C40 C60 C80 C20 C1.2 0 0.4 1.2 1.6 C1.6 C0.8 C0.4 0.8 forward current vs. forward voltage forward voltage v f (v) forward current i f (ma) 100 10 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 +25 ?c 0 ?c C25 ?c C55 ?c t a = +100 ?c +75 ?c +50 ?c
6 ps2607,ps2608,ps2607l,ps2608l frequency response frequency f (khz) normalized gain gv 5 0 C5 C10 C15 C20 C25 0.2 0.5 2 5 50 200 1 10 20 100 i f = 1 ma, v ce = 2 v r l = 100 w normalized current transfer ratio vs. ambient temperature ambient temperature t a (?c) normalized current transfer ratio ctr 1.2 0.8 0.4 0.0 1.0 0.6 0.2 C50 C25 25 50 75 100 0 normalized to 1.0 at t a = 25 ?c, i f = 1 ma, v ce = 2 v 2 000 1 000 500 200 50 100 20 50 200 500 1 k 2 k 100 switching time vs. load resistance load resistance r l ( w ) switching time t ( s) m v cc = 10 v, i c = 2 ma t off t on t f t r v ce = 2 v forward current i f (ma) current transfer ratio ctr (%) current transfer ratio vs. forward current 5 000 4 000 2 000 0 1 000 3 000 0.1 0.05 0.5 5 50 110 sample a b c d 1.2 1.0 0.0 0.4 0.2 0.8 0.6 10 2 10 3 10 10 4 10 5 10 6 time (hr) long term ctr degradation ctr (relative value) ctr test condition i f = 1 ma, v ce = 2 v i f = 1 ma, t a = 25 ?c i f = 1 ma, t a = 60 ?c collector current vs. collector to emitter voltage collector to emitter voltage v ce (v) collector current i c (ma) 140 120 100 80 60 40 20 0246810 i f = 0.5 ma 5 ma 2 ma 1 ma remark the graphs indicate nominal characteristics.
7 ps2607,ps2608,ps2607l,ps2608l recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 235 c (package surface temperature) ? time of temperature higher than 210 c 30 seconds or less ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) 60 to 90 s (preheating) 210 ?c 120 to 160 ?c package surface temperature t (?c) time (s) (heating) to 10 s to 30 s 235 ?c (peak temperature) recommended temperature profile of infrared reflow peak temperature 235 ?c or below caution please avoid removing the residual flux by water after the first reflow process. (2) dip soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? number of times one ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.)
ps2607,ps2608,ps2607l,ps2608l caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. nepoc is a trademark of nec corporation. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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